System and Method for Fault Detection in Power Semiconductor Devices

IPTeL Tracking ID: ES-EE-2018-078

The invention proposes a system and method for faster detection of fault in power semiconductor devices. It has higher magnitude of improvement in fault detection time and protection area.

Area of technology: Electrical Sciences

Technology Readiness Level (TRL): 2

BACKGROUND

  • Available technology to detect and protect short circuit and over current is based on voltage sensing has a time lag of few microseconds.
  • It is not suitable for devices switching in few nanoseconds and operating in excess of 100kHz.
  • The minimum short circuit protection time is limited due to non-ideal circuit components.
  • There is a requirement for faster and accurate fault detection for increasing reliability of semiconductor devices.

TECHNOLOGY

The invention discloses an electronic circuit for fast and accurate fault detection in semiconductor power devices based on voltage across it.

Key features:

  • Life span of power semiconductor device and its ability to withstand fault detection is improved.
  • Enables higher switching frequency operation of the power converter.
  • Faster fault detection and protection without any nuisance fault detection enable reliable operation of power converter.
  • Physical blanking capacitor can be omitted from the circuit, reducing space and cost.
  • Logic module after the comparator is simplified and therefore, no additional logic module is required in the system.

COMMERCIALIZATION

IISc has filed a provisional application for grant of patent in India. We are looking for potential licensees to commercialize this invention.

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