IPTeL Tracking ID: MPS-PHY-2017-023
The invention relates to a process to develop a novel structure of memory storage device comprising aluminium oxide phosphate with controllable storage property and trap space. It is found to have increased intrinsic charge storage and low leakage current.
BACKGROUND
In semiconductor memory devices, it is very difficult to control the trap memory and distribution. Certain applications like large area cost effective electronics use solution process sol-gel electronics and semiconductors. The main challenge of solution processed memory
devices is to simultaneously achieve deep intrinsic charge traps together with low leakage current at low processing temperatures.
TECHNOLOGY
The key feature of this technology is the following:
✓ Ultra large memory window due to high density of intrinsic electronic traps.
✓ Controllable intrinsic charge trap property which enhances flash memory.
✓ It is a robust memory device fabricated at below 200 ˚C and operational in high temperature region (>100 ˚C).
✓ No tunnelling and blocking layer are present in this device.
✓ Ultra-long non-degradable memory window even in high temperature.